By Jan A. Dziuban
This can be the 1st compendium on silicon/glass microsystems made through deep rainy etching and the 1st booklet with a close description of bonding strategies utilized in microsystem know-how. Technological effects awarded within the booklet were established experimentally via the writer and his staff, and will be used in daily laboratory perform. targeted realization has been paid to the top point of accessibility of the ebook by way of scholars.
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Extra resources for Bonding in Microsystem Technology (Springer Series in Advanced Microelectronics)
As mentioned above, the surface of micromechanical substrates is usually aligned to crystallographic planes (100) or (110). These substrates are often called substrates (wafers) (100) or (111). To mark the type of conductivity and crystallographic orientation of the surface of substrates, these so-called ﬂats (coding marks) are produced. The ﬂats (usually two) are made by suitably grinding oﬀ the edges of the wafers. Flats correspond to the chosen crystallographic direction, seen from a bird’s eye view on the substrate (Fig.
Because this hydroxide is widely applied in integrated technology as a positive resist developer, the etch process is CMOS compatible. Anisotropic silicon etching in inorganic alkali aqueous solutions has been known since the 1960s [44–75]. The water solution of potassium hydroxide (abbreviated to KOH) is usually used [45–56] pure or with organic additions. Usually isopropyl alcohol – IPA – is added. Other inorganic alkali solutions, applied more rarely, are sodium hydroxide NaOH  or ammonium hydroxide NH OH [57–60].
13b)  2 has been added for comparison. The etch rate of silicon in KOH depends on temperature and on the concentration of solution. 60 eV. 8. 8 and experimentally obtained results are presented. Etch rate characteristics as a function of the concentration of KOH solution at 80°C demonstrate 32 Chapter 3 Fig. 12. Wagon wheel test: a) cross-section of the test mask sector with the outline of the cavity, b) wagon wheel pattern at the (100) wafer, c) the pattern and crystallographic directions at the (100) wafer.