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Beyond CMOS Nanodevices 2 by Francis Balestra

By Francis Balestra

This publication deals a complete evaluation of the state of the art in cutting edge Beyond-CMOS nanodevices for constructing novel functionalities, good judgment and thoughts devoted to researchers, engineers and scholars. The ebook will rather concentrate on the curiosity of nanostructures and nanodevices (nanowires, small slope switches, second layers, nanostructured fabrics, etc.) for complex greater than Moore (RF-nanosensors-energy harvesters, on-chip digital cooling, etc.) and Beyond-CMOS common sense and thoughts purposes.

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19. SR- and PH-limited mobilities as a function of the inversion density Ninv for silicon NW and DG FETs with a channel thickness of T = 3 nm Mobility curves conclude the analysis on the SR effect on transport properties of 1D and 2D structures. 4]. We observe that μPH is always smaller than μSR. This confirms that, for the SR parameters used in these simulations, the main limiting scattering mechanism is still the el–ph interaction [POL 09a]. 19, where the mobility of the thin NW increases with the electron density in the weak 44 Beyond-CMOS Nanodevices 2 inversion regime.

7(c) reports the butterfly C–V characteristics, which are the typical signature of a ferroelectric gate stack, compared to the non-hysteretic quasi-static C–V characteristics of the internal transistor (using only SiO2 as gate dielectric) measured on the same Fe-FET device. This figure shows an excellent correlation between the regions where the minimum of the subthreshold swings is observed and the low values of the gate stack capacitance, where the negative capacitance is fulfilled. Despite the noisy quasi-static C–V, in systematic experiments we observe some reversed peaks or locally flat values of the capacitance.

After Hf-last wet cleaning, the NWs are annealed for 2 min in hydrogen at 750°C. 4). The hydrogen annealing is used for various reasons: (1) smoothening [DOR 07] and realigning the NW sidewalls to the crystal planes and (2) reshaping the NW cross-section [YAN 04]. 4. SEM (left) and cross-sectional TEM (right) images of omega-shaped-gate nanowire MOSFETs with 8 nm diameter [BAR 12a] After gate etching, a SiN layer (thickness 10 nm) was deposited and etched to form a first offset spacer on the sidewalls of the gate.

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