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Applied Physics of Carbon Nanotubes: Fundamentals of Theory, by Slava V. Rotkin, Shekhar Subramoney

By Slava V. Rotkin, Shekhar Subramoney

The ebook describes the cutting-edge in basic, utilized and equipment physics of nanotubes, together with fabrication, manipulation and characterization for gadget purposes; optics of nanotubes; delivery and electromechanical units and basics of conception for functions. this knowledge is necessary to the sector of nanoscience due to the fact that nanotubes have the capability to develop into a really major digital fabric for many years to return. The publication will gain all all readers drawn to the applying of nanotubes, both of their theoretical foundations or in newly built characterization instruments which can allow functional gadget fabrication.

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Extra resources for Applied Physics of Carbon Nanotubes: Fundamentals of Theory, Optics and Transport Devices

Example text

We will show later that one can neglect the dependence of σ on the angle β in a linear response theory (in higher orders of perturbation theory a direct transverse polarization must be taken into account [41]). σ ∗ is an image charge density which is equal to −σ for the metallic substrate. 24) is the Hartree term for the SWNT in vacuum (without charge injection). 24) is the energy of interaction of the electron with the image charge. The separation between the SWNT axis and the surface of the conductor is h.

This extra charge density polarizes the substrate, which breaks the axial symmetry of the nanotube. We will demonstrate that the direct effect of the uniform external electric field is of minor importance as compared to the nonuniform field of surface charges on the substrate. To calculate the splitting and shift of the electron energy levels one needs to know the matrix elements of the perturbation potential between corresponding wave–functions. 24) + σ (z − Z)2 ∗ + (R cos α − R cos β)2 + (R sin α + 2h − R sin β)2 .

In other words, the screening length is small in the bulk metals, thus one can neither create an electrostatic barrier for electrons nor impede electron flow by strong scattering. On the other hand, the FET conductance in the OFF state has to be as low as possible to minimize OFF current. This requires material properties close to an insulator, which is in visible contradiction with the need for a metallic ON state, unless we consider changing the material properties during the device operation.

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